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TIP41C - Samsung Semiconductor

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Part Image TIP41C Galaxy Microelectronics

Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 100V; IC (A): 6A; HFE Min: 15; HFE Max: 75; VCE (V): 4V; IC (mA): 3000mA; VCE(SAT) (V): 1.5V; IC (mA)1: 6000mA; IB (mA): 600mA; FT Min (MHz): 3 MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB

Part Image BDT41C New Jersey Semiconductor Products Inc

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image TIP41CL-TA3-T Unisonic Technologies Co Ltd

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image TIP41CG-TA3-T Unisonic Technologies Co Ltd

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image TIP41CP Fairchild Semiconductor Corporation

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

For a full list of alternate parts for TIP41C, check out Findchips.com