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VS-HFA16TB120S-M3 - Vishay

Description: Rectifiers 1200V 16A TO-263 HexFred

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VS-HFA16TB120S-M3 Details

  • Manufacturer Part Number:

    VS-HFA16TB120S-M3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    15 Weeks

  • Date Of Intro:

    2018-02-15

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.75

  • Additional Feature:

    LOW NOISE, PD-CASE

  • Application:

    EFFICIENCY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    3.93 V

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    190 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    16 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Power Dissipation-Max:

    151 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    20 µA

  • Reverse Recovery Time-Max:

    0.135 µs

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

VS-HFA16TB120S-M3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the VS-HFA16TB120S-M3 is -40°C to 125°C.
  • To ensure safe operation during overvoltage conditions, use a voltage clamp or a transient voltage suppressor (TVS) in parallel with the thyristor to limit the voltage across it.
  • The recommended gate current for reliable triggering of the VS-HFA16TB120S-M3 is typically in the range of 10-50 mA, depending on the specific application and circuit conditions.
  • While the VS-HFA16TB120S-M3 can be used for high-frequency switching applications, its switching speed is limited to around 1 kHz. For higher-frequency applications, consider using a faster thyristor or a different type of semiconductor device.
  • To protect the VS-HFA16TB120S-M3 from electrical noise and EMI, use a snubber circuit or a noise filter in the gate circuit, and ensure proper PCB layout and grounding practices are followed.

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VS-HFA16TB120S-M3 Overview

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Part Image VS-HFA16TB120SHM3 Vishay Intertechnologies

Rectifier Diode, 1 Phase, 1 Element, 16A, 1200V V(RRM), Silicon, TO-263AB

Part Image VS-HFA16TB120SR-M3 Vishay Intertechnologies

Rectifier Diode, 1 Phase, 1 Element, 16A, 1200V V(RRM), Silicon, TO-263AB

Part Image HFA16TB120S Vishay Intertechnologies

Rectifier Diode, 1 Phase, 1 Element, 16A, 1200V V(RRM), Silicon

Part Image VS-HFA16TB120STRRP Vishay Intertechnologies

Rectifier Diode, 1 Phase, 1 Element, 16A, 1200V V(RRM), Silicon, TO-263AB