The thermal resistance of the WHDR10FET is typically around 1.5°C/W, but this can vary depending on the specific application and mounting method.
While the WHDR10FET is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100 kHz with some derating. However, it's essential to consult with Ohmite's application engineers to ensure the device meets your specific requirements.
To ensure proper heat sinking, it's recommended to use a thermal interface material (TIM) and a heat sink with a thermal conductivity of at least 1 W/m-K. Additionally, ensure the heat sink is properly mounted and secured to the device.
The maximum operating temperature for the WHDR10FET is 150°C. However, it's recommended to derate the device's power rating as the temperature increases to ensure reliable operation.
The WHDR10FET is rated for a maximum voltage of 100V. While it can be used in high-voltage applications, it's essential to ensure the device is properly derated and used within its specified voltage rating to avoid damage or failure.
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WHDR10FET Overview
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