BD830 - NXP
Description: NPN silicon power transistor (BD830), 100V Vcb, 80V Vce, 1A Ic, 8W Pd, 75 MHz ft, TO-202 package, hFE ≥ 40, 150°C max junction temp.
Description: NPN silicon power transistor (BD830), 100V Vcb, 80V Vce, 1A Ic, 8W Pd, 75 MHz ft, TO-202 package, hFE ≥ 40, 150°C max junction temp.
