BUL45D2G - onsemi

Description: "6 Sigma" Process Providing Tight and Reproductible Parameter Spreads; High Peak DC Current Gain (55 Typical) @ IC = 100 mA; Low Base Drive Requirement; Integrated Collector-Emitter Free Wheeling Diode; Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread; Fully Characterized and Guaranteed Dynamic VCE(sat); Pb-Free Package is Available