FCA47N60 - onsemi
Description: Typ. RDS(on) = 58mΩ; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 210nC ); RoHS Compliant; Low effective output capacitance ( Typ. Coss.eff = 420pF ); 650V @TJ = 150°C
Description: Typ. RDS(on) = 58mΩ; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 210nC ); RoHS Compliant; Low effective output capacitance ( Typ. Coss.eff = 420pF ); 650V @TJ = 150°C
