FCB110N65F - onsemi
Description: Ultra Low Gate Charge (Typ. Qg = 98 nC); Typ. RDS(on) = 96 mΩ (Typ.); RoHS Compliant; Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF); 700 V @TJ= 150°C; 100% Avalanche Tested
Description: Ultra Low Gate Charge (Typ. Qg = 98 nC); Typ. RDS(on) = 96 mΩ (Typ.); RoHS Compliant; Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF); 700 V @TJ= 150°C; 100% Avalanche Tested
