FCB20N60FTM - onsemi
Description: Ultra low gate charge ( Typ. Qg = 75nC ); 650V @TJ = 150°C; Low effective output capacitance ( Typ. Coss.eff = 165pF ); Typ. RDS(on) = 150mΩ; RoHS compliant; 100% avalanche tested
Description: Ultra low gate charge ( Typ. Qg = 75nC ); 650V @TJ = 150°C; Low effective output capacitance ( Typ. Coss.eff = 165pF ); Typ. RDS(on) = 150mΩ; RoHS compliant; 100% avalanche tested
