FCD4N60TM - onsemi
Description: RoHS compliant; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 12.8nC ); 650V @TJ = 150°C; Low effective output capacitance ( Typ. Coss.eff = 32pF ); Typ. RDS(on) = 1.0Ω
Description: RoHS compliant; 100% avalanche tested; Ultra low gate charge ( Typ. Qg = 12.8nC ); 650V @TJ = 150°C; Low effective output capacitance ( Typ. Coss.eff = 32pF ); Typ. RDS(on) = 1.0Ω
