FCP20N60 - onsemi
Description: Ultra Low Gate Charge (Typ. Qg = 75 nC ); Typ. RDS(on) = 150 mΩ; Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ); 650V @ TJ = 150°C; 100% Avalanche Tested
Description: Ultra Low Gate Charge (Typ. Qg = 75 nC ); Typ. RDS(on) = 150 mΩ; Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ); 650V @ TJ = 150°C; 100% Avalanche Tested
