FCPF099N65S3 - onsemi
Description: 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 57 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 517 pF); Optimized Capacitance; Typ. RDS(on) = 85 mΩ; 100% Avalanche Tested; RoHS Compliant
Description: 700 V @ TJ = 150 oC; Ultra Low Gate Charge (Typ. Qg = 57 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 517 pF); Optimized Capacitance; Typ. RDS(on) = 85 mΩ; 100% Avalanche Tested; RoHS Compliant
