FDB33N25TM - onsemi
Description: RDS(on) = 94mΩ ( Max.)@ VGS = 10V, ID = 16.5A; Low Crss ( Typ. 39pF); 100% avalanche tested; Low gate charge ( Typ. 36.8nC)
Description: RDS(on) = 94mΩ ( Max.)@ VGS = 10V, ID = 16.5A; Low Crss ( Typ. 39pF); 100% avalanche tested; Low gate charge ( Typ. 36.8nC)
