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FDC6321C - onsemi

Description: N-Ch 25 V, 0.68 A, RDS(ON) = 0.45 Ω @ VGS= 4.5 V; Replace multiple dual NPN & PNP digital transistors.; Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) < 1.0V.; P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 Ω @ VGS= -4.5 V.; Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

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