FDC634P - onsemi
Description: High performance trench technology for extremelylow RDS(ON) ; -3.5 A, -20 V ; Low gate charge (7.2 nC typical) ; RDS(ON) = 110 mΩ @ VGS = -2.5 V ; RDS(ON) = 80 mΩ @ VGS = -4.5 V
Description: High performance trench technology for extremelylow RDS(ON) ; -3.5 A, -20 V ; Low gate charge (7.2 nC typical) ; RDS(ON) = 110 mΩ @ VGS = -2.5 V ; RDS(ON) = 80 mΩ @ VGS = -4.5 V
