FDD5680 - onsemi
Description: Low gate charge (33nC typical); RDS(on) = 25 mΩ @ VGS = 6 V; High performance trench technology for extremely low RDS(on); RDS(on) = 21 mΩ @ VGS = 10 V; 38 A, 60 V; Fast switching speed
Description: Low gate charge (33nC typical); RDS(on) = 25 mΩ @ VGS = 6 V; High performance trench technology for extremely low RDS(on); RDS(on) = 21 mΩ @ VGS = 10 V; 38 A, 60 V; Fast switching speed
