FDD7N25LZTM - onsemi
Description: 100% avalanche tested; RDS(on) = 430mΩ (Typ.)@ VGS = 10V, ID = 3.1A; RoHS compliant; Low gate charge (Typ. 12nC); Low Crss (Typ. 8pF); Improved dv/dt capability; ESD improved capability
Description: 100% avalanche tested; RDS(on) = 430mΩ (Typ.)@ VGS = 10V, ID = 3.1A; RoHS compliant; Low gate charge (Typ. 12nC); Low Crss (Typ. 8pF); Improved dv/dt capability; ESD improved capability
