FDMA910PZ - onsemi

Description: Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A ; RoHS Compliant ; Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A ; HBM ESD protection level > 2.8k V typical (Note 3) ; Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm ; Free from halogenated compounds and antimony oxides ; Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A