FDN327N - onsemi
Description: RDS(ON) = 80 mΩ @ VGS = 2.5 V; Fast switching speed; 2 A, 20 V ; High performance trench technology for extremely low RDS(on); Low gate charge; RDS(ON) = 70 mΩ @ VGS = 4.5 V; RDS(ON) = 120 mΩ @ VGS = 1.8 V
Description: RDS(ON) = 80 mΩ @ VGS = 2.5 V; Fast switching speed; 2 A, 20 V ; High performance trench technology for extremely low RDS(on); Low gate charge; RDS(ON) = 70 mΩ @ VGS = 4.5 V; RDS(ON) = 120 mΩ @ VGS = 1.8 V
