FDP150N10 - onsemi
Description: RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A; High performance trench technology for extremely low RDS(on) ; Fast switching speed; RoHS compliant; Low Gate Charge; High power and current handling capability
Description: RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A; High performance trench technology for extremely low RDS(on) ; Fast switching speed; RoHS compliant; Low Gate Charge; High power and current handling capability
