FDP65N06 - onsemi
Description: Fast Switching Speed; RDS(on) = 13mΩ (Max.)@ VGS = 10V, ID = 32.5A; Low gate charge (Typ. 33nC); Low Crss (Typ. 35pF); Improved dv/dt Capability
Description: Fast Switching Speed; RDS(on) = 13mΩ (Max.)@ VGS = 10V, ID = 32.5A; Low gate charge (Typ. 33nC); Low Crss (Typ. 35pF); Improved dv/dt Capability
