FDS6912A - onsemi
Description: Low gate charge; 6 A, 30 V; RDS(ON) = 35 mΩ @ VGS = 4.5 V ; RDS(ON) = 28 mΩ @ VGS = 10 V; Fast switching speed; High performance trench technology for extremely low RDS(ON); High power and current handling capability
Description: Low gate charge; 6 A, 30 V; RDS(ON) = 35 mΩ @ VGS = 4.5 V ; RDS(ON) = 28 mΩ @ VGS = 10 V; Fast switching speed; High performance trench technology for extremely low RDS(ON); High power and current handling capability
