FDS9435A - onsemi
Description: RDS(ON) = 50 mΩ @ VGS = -10 V; Low gate charge; Fast switching speed ; High density cell design for extremely low RDS(ON).; High power and current handling capability; -5.3 A, -30 V; RDS(ON) = 80 mΩ @ VGS = - 4.5 V.
Description: RDS(ON) = 50 mΩ @ VGS = -10 V; Low gate charge; Fast switching speed ; High density cell design for extremely low RDS(ON).; High power and current handling capability; -5.3 A, -30 V; RDS(ON) = 80 mΩ @ VGS = - 4.5 V.
