FDV305N - onsemi
Description: RDS(ON) = 300 mΩ @ VGS = 2.5 V; High performance trench technology for extremelylow RDS(ON); Low gate charge; 0.9 A, 20 V; Fast switching speed; RDS(ON) = 220 mΩ @ VGS = 4.5 V
Description: RDS(ON) = 300 mΩ @ VGS = 2.5 V; High performance trench technology for extremelylow RDS(ON); Low gate charge; 0.9 A, 20 V; Fast switching speed; RDS(ON) = 220 mΩ @ VGS = 4.5 V
