FQB12P20TM - onsemi
Description: Low Crss ( Typ. 30pF); Low gate charge ( Typ. 31nC); RoHS Compliant; -11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A; 100% avalanche tested
Description: Low Crss ( Typ. 30pF); Low gate charge ( Typ. 31nC); RoHS Compliant; -11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A; 100% avalanche tested
