FQB4N80TM - onsemi
Description: 3.9A, 800V, RDS(on) = 3.6Ω(Max.) @VGS = 10 V, ID = 1.95A; Low Crss ( Typ. 8.6pF); RoHS compliant; Low gate charge ( Typ. 19nC); 100% avalanche tested
Description: 3.9A, 800V, RDS(on) = 3.6Ω(Max.) @VGS = 10 V, ID = 1.95A; Low Crss ( Typ. 8.6pF); RoHS compliant; Low gate charge ( Typ. 19nC); 100% avalanche tested
