FQP50N06 - onsemi
Description: Fast switching ; 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V ; Improved dv/dt capability ; 175°C maximum junction temperature rating; 100% avalanche tested ; Low Crss ( typical 65 pF) ; Low gate charge ( typical 31 nC)
Description: Fast switching ; 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V ; Improved dv/dt capability ; 175°C maximum junction temperature rating; 100% avalanche tested ; Low Crss ( typical 65 pF) ; Low gate charge ( typical 31 nC)
