FQP7N80C - onsemi
Description: 100% avalanche tested; Low gate charge ( Typ. 27nC); 6.6A, 800V, RDS(on) = 1.9Ω(Max.) @VGS = 10 V, ID = 3.3A; Low Crss ( Typ. 10pF)
Description: 100% avalanche tested; Low gate charge ( Typ. 27nC); 6.6A, 800V, RDS(on) = 1.9Ω(Max.) @VGS = 10 V, ID = 3.3A; Low Crss ( Typ. 10pF)
