FQPF6N80C - onsemi
Description: Low Crss ( Typ. 8pF); 5.5A, 800V, RDS(on) = 2.5Ω(Max.) @VGS = 10 V, ID = 2.75A; 100% avalanche tested; Low gate charge ( Typ. 21nC)
Description: Low Crss ( Typ. 8pF); 5.5A, 800V, RDS(on) = 2.5Ω(Max.) @VGS = 10 V, ID = 2.75A; 100% avalanche tested; Low gate charge ( Typ. 21nC)
