FQPF9N50CF - onsemi
Description: Low Crss ( Typ. 24pF); Low gate charge ( Typ. 28nC); 100% avalanche tested; 9A, 500V, RDS(on) = 850mΩ(Max.) @VGS = 10 V, ID = 4.5A; Fast recovery body diode (Typ. 100ns)
Description: Low Crss ( Typ. 24pF); Low gate charge ( Typ. 28nC); 100% avalanche tested; 9A, 500V, RDS(on) = 850mΩ(Max.) @VGS = 10 V, ID = 4.5A; Fast recovery body diode (Typ. 100ns)
