NTHL041N60S5H - onsemi

Description: Ultra Low Gate Charge (Typ. Qg = 108 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 643 pF); Fast switching performance with robust body diode; 650 V @ TJ = 150°C; Typ. RDS(on) = 32.8 m Ω; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.6 Ω