RGP10B - onsemi
Description: High temperature metallurgically bonded construction. ; Fast switching for high efficiency.; Glass passivated cavity-free junction. ; Typical IR less than 1µA. ; 1.0 ampere operation at TA = 55°C with no thermal runaway.
Description: High temperature metallurgically bonded construction. ; Fast switching for high efficiency.; Glass passivated cavity-free junction. ; Typical IR less than 1µA. ; 1.0 ampere operation at TA = 55°C with no thermal runaway.
