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1ED3890MU12MXUMA1 - Infineon

Description: Gate Drivers ISOLATED DRIVER Single-channel 5.7 kV (rms) isolated gate driver IC with I2C configurability for DESAT, Soft-off, UVLO, Miller clamp and optional two-level turn-of

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1ED3890MU12MXUMA1 - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 1ED3890MU12M
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1ED3890MU12MXUMA1 Details

  • Manufacturer Part Number:

    1ED3890MU12MXUMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Indonesia

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    8

  • High Side Driver:

    YES

  • Input Characteristics:

    SCHMITT TRIGGER

  • Interface IC Type:

    BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G16

  • JESD-609 Code:

    e3

  • Length:

    7.5 mm

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    16

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Peak Current Limit-Nom:

    11 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SSOP

  • Package Equivalence Code:

    SSOP16,.40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, SHRINK PITCH

  • Seated Height-Max:

    2.65 mm

  • Supply Current-Max:

    5 mA

  • Supply Voltage-Max:

    5.5 V

  • Supply Voltage-Min:

    3 V

  • Supply Voltage-Nom:

    3.3 V

  • Supply Voltage1-Max:

    25 V

  • Supply Voltage1-Min:

    13 V

  • Supply Voltage1-Nom:

    15 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Turn-off Time:

    0.262 µs

  • Turn-on Time:

    0.27 µs

  • Width:

    6.4 mm

1ED3890MU12MXUMA1 Frequently Asked Questions (FAQs)

  • Infineon provides a dedicated application note (AN2014-03) that outlines the recommended PCB layout and thermal management guidelines for the 1ED3890MU12MXUMA1. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal dissipation.
  • When selecting a gate driver for the 1ED3890MU12MXUMA1, consider factors such as the driver's output current capability, voltage rating, and propagation delay. Infineon recommends using a gate driver like the 1EDI60N12AF or 1EDI60N12BF, which are specifically designed to work with the 1ED3890MU12MXUMA1. Consult the gate driver datasheet and application notes for more information.
  • Paralleling multiple 1ED3890MU12MXUMA1 devices can be done to increase the overall current handling capability. However, it's crucial to ensure proper synchronization and current sharing to avoid uneven current distribution and potential damage. Infineon recommends using a dedicated master-slave configuration and following the guidelines outlined in the application note (AN2019-07) for paralleling IGBT modules.
  • Implementing overcurrent protection and fault detection is critical for ensuring the reliability and safety of the system. Infineon recommends using a combination of hardware and software-based protection mechanisms, such as desaturation detection, overcurrent detection, and temperature monitoring. Consult the application note (AN2018-04) for more information on implementing fault detection and protection strategies for the 1ED3890MU12MXUMA1.
  • The 1ED3890MU12MXUMA1 is designed to meet the highest reliability and durability standards, with a typical lifetime of 15-20 years or more, depending on the application and operating conditions. Infineon's rigorous testing and qualification processes ensure that the device meets or exceeds industry standards for reliability and durability. Consult the datasheet and reliability report for more information.

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