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1EDI30I12MFXUMA1 - Infineon

Description: Infineon 1EDI30I12MFXUMA1 Dual Galvanic Isolated MOSFET Power Driver, -6.2 A, 5.9 A, 3.1 → 17 V 8-Pin, DSO

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1EDI30I12MFXUMA1 Details

  • Manufacturer Part Number:

    1EDI30I12MFXUMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    8

  • Built-in Protections:

    UNDER VOLTAGE

  • High Side Driver:

    YES

  • Input Characteristics:

    STANDARD

  • Interface IC Type:

    BUFFER OR INVERTER BASED IGBT DRIVER

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.9 mm

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current Flow Direction:

    SOURCE AND SINK

  • Output Peak Current Limit-Nom:

    6.2 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Seated Height-Max:

    1.75 mm

  • Supply Voltage-Max:

    17 V

  • Supply Voltage-Min:

    3.1 V

  • Supply Voltage-Nom:

    5 V

  • Supply Voltage1-Max:

    18 V

  • Supply Voltage1-Min:

    13 V

  • Supply Voltage1-Nom:

    15 V

  • Surface Mount:

    YES

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Turn-off Time:

    0.33 µs

  • Turn-on Time:

    0.33 µs

  • Width:

    3.9 mm

1EDI30I12MFXUMA1 Frequently Asked Questions (FAQs)

  • Infineon recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • Ensure proper thermal management, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermistor or thermocouple to monitor the device temperature.
  • Infineon recommends a gate drive voltage of 12-15V for optimal switching performance. However, the exact voltage may vary depending on the specific application and requirements.
  • Use a TVS diode or a voltage clamp to protect the device from overvoltage. Implement overcurrent protection using a fuse or a current sense resistor with a monitoring circuit.
  • The recommended dead time for the 1EDI30I12MFXUMA1 is typically in the range of 100-200ns, depending on the specific application and switching frequency.

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1EDI30I12MFXUMA1 Overview

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