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1EDN7511BXUSA1 - Infineon

Description: INFINEON - 1EDN7511BXUSA1 - MOSFET DRIVER, -40 TO 150DEG C

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1EDN7511BXUSA1 - Infineon PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - 1EDN7511BXUSA1
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1EDN7511BXUSA1 Details

  • Manufacturer Part Number:

    1EDN7511BXUSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-23, 6 PIN

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • High Side Driver:

    NO

  • Input Characteristics:

    DIFFERENTIAL SCHMITT TRIGGER

  • Interface IC Type:

    BUFFER OR INVERTER BASED MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Length:

    2.9 mm

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    6

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Peak Current Limit-Nom:

    8 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    LSOP

  • Package Equivalence Code:

    TSOP6,.11,37

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, LOW PROFILE

  • Seated Height-Max:

    1.45 mm

  • Supply Voltage-Max:

    20 V

  • Supply Voltage-Min:

    4.5 V

  • Supply Voltage-Nom:

    12 V

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.95 mm

  • Terminal Position:

    DUAL

  • Turn-off Time:

    0.025 µs

  • Turn-on Time:

    0.025 µs

  • Width:

    1.6 mm

1EDN7511BXUSA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2014-01, which includes guidelines for thermal vias, copper pours, and component placement to ensure optimal thermal performance.
  • Infineon recommends using a gate driver with a high current capability and a short propagation delay, such as the 1EDF5673B or 1EDF5675B. The gate driver should also be compatible with the device's voltage and current ratings.
  • The maximum allowed junction temperature for the 1EDN7511BXUSA1 is 150°C, as specified in the datasheet. Exceeding this temperature can reduce the device's lifespan and affect its performance.
  • To ensure EMC, follow Infineon's guidelines for PCB layout, component selection, and shielding. Additionally, use a common-mode choke and a Y-capacitor to filter out electromagnetic interference (EMI).
  • For high-power applications, Infineon recommends using a heat sink with a thermal interface material (TIM) and a fan for forced air cooling. The heat sink should be designed to minimize thermal resistance and ensure good thermal contact with the device.

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1EDN7511BXUSA1 Overview

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