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1N4151 - Microsemi Corporation

Description: Diode Switching 75V 0.2A 2-Pin DO-35 Bag

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1N4151 - Microsemi Corporation PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - 1N4151
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1N4151 - Microsemi Corporation  - 3D model - Diodes, Axial Diameter Horizontal Mounting - 1N4151
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1N4151 Details

  • Manufacturer Part Number:

    1N4151

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    METALLURGICALLY BONDED

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1 V

  • JEDEC-95 Code:

    DO-35

  • JESD-30 Code:

    O-LALF-W2

  • JESD-609 Code:

    e0

  • Non-rep Pk Forward Current-Max:

    0.5 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Qualification Status:

    Not Qualified

  • Reverse Current-Max:

    0.05 µA

  • Reverse Recovery Time-Max:

    0.004 µs

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

1N4151 Frequently Asked Questions (FAQs)

  • The recommended mounting pad layout for the 1N4151 is a rectangular pad with a minimum size of 0.05 inches x 0.05 inches (1.27 mm x 1.27 mm) and a maximum size of 0.1 inches x 0.1 inches (2.54 mm x 2.54 mm). The pad should be centered on the diode's cathode lead.
  • To handle ESD protection for the 1N4151, it is recommended to use an ESD wrist strap or mat, and to handle the device by the body or leads, rather than the glass diode itself. Additionally, the device should be stored in an anti-static bag or tube when not in use.
  • The maximum operating temperature range for the 1N4151 is -65°C to +175°C. However, the device's performance may degrade at temperatures above 150°C, and it is recommended to operate the device within the -55°C to +125°C range for optimal performance.
  • Yes, the 1N4151 can be used in high-frequency applications up to 1 GHz. However, the device's performance may degrade at frequencies above 500 MHz, and it is recommended to use a high-frequency diode such as the 1N4148 or 1N4448 for applications above 1 GHz.
  • To solder the 1N4151, use a soldering iron with a temperature of 250°C to 300°C, and apply a small amount of solder to the lead. The soldering time should be limited to 2-3 seconds to prevent overheating the device. It is also recommended to use a solder with a melting point of 180°C to 200°C.

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1N4151 Overview

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Part Image 1N4151 Microchip Technology Inc

Rectifier Diode, 1 Phase, 1 Element, 0.2A, Silicon, DO-35