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1N5187 - Microsemi Corporation

Description: Rectifiers UFR,FRR

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1N5187 - Microsemi Corporation PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - 1N5187
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3D Models
1N5187 - Microsemi Corporation  - 3D model - Diodes, Axial Diameter Horizontal Mounting - 1N5187
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1N5187 Details

  • Manufacturer Part Number:

    1N5187

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    HERMETIC SEALED, GLASS PACKAGE-2

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    FAST RECOVERY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • JESD-30 Code:

    O-LALF-W2

  • JESD-609 Code:

    e0

  • Non-rep Pk Forward Current-Max:

    80 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Output Current-Max:

    3 A

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    200 V

  • Reverse Recovery Time-Max:

    0.2 µs

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

1N5187 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 1N5187 is -65°C to 175°C, although it can withstand storage temperatures from -65°C to 200°C.
  • To ensure proper biasing, the 1N5187 requires a minimum voltage of 10V to 12V on the anode (A) pin, and the cathode (K) pin should be connected to a low-impedance ground or a voltage source with a maximum voltage of 1.5V.
  • The maximum allowable power dissipation for the 1N5187 is 500mW, and it's essential to ensure that the device does not exceed this rating to prevent overheating and damage.
  • While the 1N5187 is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100MHz. However, it's essential to consider the device's parasitic capacitance and inductance when designing high-frequency circuits.
  • To prevent electrostatic discharge (ESD) damage, it's essential to handle the 1N5187 with ESD-protected equipment, wear an ESD strap, and ensure that the device is stored in an ESD-protected environment.

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1N5187 Overview

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