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1N5313 - Microsemi Corporation

Description: Current Regulator Diode 100V 4.73mA 500mW 2-Pin DO-35 Bag

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PCB Footprints
1N5313 - Microsemi Corporation PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - 2-Pin DO-35
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1N5313 - Microsemi Corporation  - 3D model - Diodes, Axial Diameter Horizontal Mounting - 2-Pin DO-35
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1N5313 Details

  • Manufacturer Part Number:

    1N5313

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    DO-7

  • Package Description:

    DO-35, 2 PIN

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    METALLURGICALLY BONDED

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    CURRENT REGULATOR DIODE

  • JEDEC-95 Code:

    DO-35

  • JESD-30 Code:

    O-XALF-W2

  • JESD-609 Code:

    e0

  • Knee Impedance-Max:

    14000 Ω

  • Limiting Voltage-Max:

    2.75 V

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Power Dissipation-Max:

    0.5 W

  • Qualification Status:

    Not Qualified

  • Regulation Current-Nom (Ireg):

    4.3 mA

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Surface Mount:

    NO

  • Technology:

    FIELD EFFECT

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

1N5313 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 1N5313 is -65°C to 175°C, although it can withstand temperatures up to 200°C for short periods.
  • To ensure proper biasing, the 1N5313 should be operated with a minimum voltage of 10V and a maximum voltage of 30V, with a recommended operating current of 1mA to 10mA.
  • The maximum power dissipation of the 1N5313 is 500mW, and it is recommended to derate the power dissipation by 2mW/°C above 25°C to ensure reliable operation.
  • Yes, the 1N5313 is designed for high-reliability applications and is qualified to various military and aerospace standards, including MIL-PRF-19500 and NASA GSFC-R-595.
  • The 1N5313 has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures, such as using an ESD wrist strap or mat, to prevent damage to the device.

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1N5313 Overview

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Part Image 1N5313-1E3 Microchip Technology Inc

Current Regulator Diode, 4.3mA I(S), 2.75V V(L), Silicon, DO-7

Part Image JANTXV1N5313-1 Microchip Technology Inc

Current Regulator _ DO-35

Part Image 1N5313-1E3 Microsemi Corporation (now Microchip)

Current Regulator Diode, 4.3mA I(S), 2.75V V(L), Silicon, DO-7

Part Image JANS1N5313-1 Microsemi Corporation (now Microchip)

Current Regulator Diode, 4.3mA I(S), 2.75V V(L), Silicon, DO-35

Part Image JANTX1N5313-1 Microsemi Corporation (now Microchip)

Current Regulator Diode, 4.3mA I(S), 2.75V V(L), Silicon, DO-35

For a full list of alternate parts for 1N5313, check out Findchips.com