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1N5386B - onsemi

Description: ON Semiconductor 1N5386B Zener Diode, 180V 5% 5 W Through Hole 2-Pin DO-15

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1N5386B - onsemi - PCB symbol
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1N5386B - onsemi PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - 1N5386B
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1N5386B - onsemi - 3D model - Diodes, Axial Diameter Horizontal Mounting - 1N5386B
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1N5386B Details

  • Manufacturer Part Number:

    1N5386B

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    PLASTIC, CASE 017AA-01, 2 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    ZENER DIODE

  • Dynamic Impedance-Max:

    430 Ω

  • JEDEC-95 Code:

    DO-41

  • JESD-30 Code:

    O-PALF-W2

  • JESD-609 Code:

    e3

  • Knee Impedance-Max:

    1750 Ω

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    5 W

  • Qualification Status:

    Not Qualified

  • Reference Voltage-Nom:

    180 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Test Voltage:

    137 V

  • Surface Mount:

    NO

  • Technology:

    ZENER

  • Terminal Finish:

    TIN

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

  • Voltage Tol-Max:

    5%

  • Working Test Current:

    5 mA

1N5386B Frequently Asked Questions (FAQs)

  • The recommended mounting pad layout for the 1N5386B is a rectangular pad with a minimum size of 2.5 mm x 1.5 mm, with a 0.5 mm radius corner. This layout ensures proper heat dissipation and reduces thermal resistance.
  • Yes, the 1N5386B can be used in a switching power supply, but it's essential to ensure that the diode is properly snubbed to prevent voltage spikes and ringing. A snubber circuit can be added to reduce electromagnetic interference (EMI) and ensure reliable operation.
  • The maximum allowable case temperature for the 1N5386B is 150°C. Exceeding this temperature can reduce the diode's reliability and lifespan. It's essential to ensure proper heat sinking and thermal management to keep the case temperature within the recommended range.
  • The 1N5386B is not suitable for high-frequency applications above 1 MHz due to its relatively high reverse recovery time (trr) of 3 μs. For high-frequency applications, consider using a faster diode with a lower trr, such as the 1N5408 or 1N5409.
  • The 1N5386B has a maximum repetitive peak reverse voltage (Vrrm) of 600 V. While it can be used in high-voltage applications, it's essential to ensure that the diode is properly protected against voltage transients and spikes. Consider adding a transient voltage suppressor (TVS) or a voltage clamp to protect the diode.

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1N5386B Overview

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1N5386B Alternates

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Part Image 1N5386B-BP-HF Micro Commercial Components

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Part Image 1N5386BTR Microsemi Corporation (now Microchip)

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Part Image 1N5386B/TR8 Microsemi Corporation (now Microchip)

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Part Image 1N5386BE3 Microsemi Corporation (now Microchip)

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For a full list of alternate parts for 1N5386B, check out Findchips.com