FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
Application:
EFFICIENCY
Case Connection:
ISOLATED
Configuration:
SINGLE
Diode Element Material:
SILICON
Diode Type:
RECTIFIER DIODE
Forward Voltage-Max (VF):
0.9 V
JEDEC-95 Code:
DO-201AD
JESD-30 Code:
O-PALF-W2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Non-rep Pk Forward Current-Max:
70 A
Number of Elements:
1
Number of Phases:
1
Number of Terminals:
2
Operating Temperature-Max:
125 °C
Operating Temperature-Min:
-65 °C
Output Current-Max:
3 A
Package Body Material:
PLASTIC/EPOXY
Package Shape:
ROUND
Package Style:
LONG FORM
Peak Reflow Temperature (Cel):
260
Qualification Status:
Not Qualified
Rep Pk Reverse Voltage-Max:
30 V
Surface Mount:
NO
Technology:
SCHOTTKY
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
WIRE
Terminal Position:
AXIAL
1N5821 Frequently Asked Questions (FAQs)
The recommended footprint and land pattern for the 1N5821 can be found in the Taiwan Semiconductor's packaging information document or in IPC-7351 standard. A typical footprint for the 1N5821 is a DO-201AD package with a recommended land pattern of 4.5mm x 2.5mm.
To ensure proper soldering, follow the recommended soldering profile and temperature guidelines provided by Taiwan Semiconductor. Use a solder with a melting point below 260°C and avoid applying excessive heat or force during soldering. Inspect the solder joints for defects such as cold joints, solder bridges, or insufficient solder.
The maximum allowable voltage derating for the 1N5821 is typically 80% of the maximum rated voltage. For example, if the maximum rated voltage is 50V, the derated voltage would be 40V. However, it's recommended to consult with Taiwan Semiconductor or a qualified engineer to determine the appropriate derating for a specific application.
The 1N5821 is rated for operation up to 150°C. However, the device's performance and reliability may degrade at high temperatures. It's recommended to consult with Taiwan Semiconductor or a qualified engineer to determine the suitability of the 1N5821 for high-temperature applications and to ensure proper thermal management.
Handle the 1N5821 with care to prevent ESD damage. Use anti-static wrist straps, mats, or packaging materials to prevent static electricity buildup. Store the devices in their original packaging or in a conductive bag to prevent ESD damage.
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1N5821 Overview
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