EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE
Breakdown Voltage-Min:
6 V
Case Connection:
ISOLATED
Clamping Voltage-Max:
9.4 V
Configuration:
SINGLE
Diode Element Material:
SILICON
Diode Type:
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code:
O-PALF-W2
JESD-609 Code:
e3
Non-rep Peak Rev Power Dis-Max:
1500 W
Number of Elements:
1
Number of Terminals:
2
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-65 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
ROUND
Package Style:
LONG FORM
Peak Reflow Temperature (Cel):
260
Polarity:
UNIDIRECTIONAL
Power Dissipation-Max:
5 W
Qualification Status:
Not Qualified
Rep Pk Reverse Voltage-Max:
5 V
Surface Mount:
NO
Technology:
ZENER
Terminal Finish:
TIN
Terminal Form:
WIRE
Terminal Position:
AXIAL
1N6373G Frequently Asked Questions (FAQs)
The recommended operating temperature range for the 1N6373G is -65°C to 175°C.
To ensure proper biasing, the 1N6373G should be connected in a circuit with a voltage source, a current-limiting resistor, and a load. The voltage source should be set to the recommended operating voltage, and the current-limiting resistor should be chosen to limit the current to the recommended maximum value.
The maximum surge current rating for the 1N6373G is 30A for a duration of 1ms.
To protect the 1N6373G from overvoltage and overcurrent conditions, a voltage regulator or a zener diode can be used to limit the voltage, and a current-limiting resistor or a fuse can be used to limit the current.
The typical junction-to-case thermal resistance of the 1N6373G is 1.5°C/W.
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1N6373G Overview
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