EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE
Breakdown Voltage-Max:
7 V
Breakdown Voltage-Min:
6.4 V
Clamping Voltage-Max:
9.2 V
Configuration:
SINGLE
Diode Element Material:
SILICON
Diode Type:
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code:
DO-214AA
JESD-30 Code:
R-PDSO-C2
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Non-rep Peak Rev Power Dis-Max:
600 W
Number of Elements:
1
Number of Terminals:
2
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-65 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity:
UNIDIRECTIONAL
Power Dissipation-Max:
0.55 W
Qualification Status:
Not Qualified
Reference Standard:
UL RECOGNIZED
Rep Pk Reverse Voltage-Max:
5 V
Surface Mount:
YES
Technology:
ZENER
Terminal Finish:
TIN
Terminal Form:
C BEND
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
1SMB5.0AT3G Frequently Asked Questions (FAQs)
The maximum operating temperature range for the 1SMB5.0AT3G is -65°C to 150°C.
To ensure proper biasing, connect the anode to a stable voltage source and the cathode to the circuit ground. The recommended bias voltage is between 5V to 30V.
The maximum peak pulse power rating for the 1SMB5.0AT3G is 5000W for a 1ms pulse width.
To protect the 1SMB5.0AT3G from EOS, use a series resistor to limit the current, and consider adding a fuse or a current-limiting device to prevent excessive current surges.
The recommended storage temperature range for the 1SMB5.0AT3G is -65°C to 150°C.
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Community Provided
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System Verified
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1SMB5.0AT3G Overview
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