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1SS387,H3F - Toshiba

Description: Diodes - General Purpose, Power, Switching Hi Spd Switch Diode 0.1A Io 80V Vr

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1SS387,H3F - Toshiba PCB footprint - Small Outline Diode Flat Lead - Small Outline Diode Flat Lead - 1-1G1A
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1SS387,H3F - Toshiba  - 3D model - Small Outline Diode Flat Lead - 1-1G1A
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1SS387,H3F Details

  • Manufacturer Part Number:

    1SS387,H3F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.1

  • Application:

    ULTRA FAST RECOVERY

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.2 V

  • JESD-30 Code:

    R-PDSO-F2

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    1 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Output Current-Max:

    0.1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.15 W

  • Rep Pk Reverse Voltage-Max:

    85 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Recovery Time-Max:

    0.004 µs

  • Reverse Test Voltage:

    80 V

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

1SS387,H3F Frequently Asked Questions (FAQs)

  • Toshiba recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • To ensure reliable operation, follow the recommended operating temperature range (−40°C to 150°C), and consider using a heat sink or thermal interface material to reduce thermal resistance.
  • Although the datasheet doesn't specify a maximum input voltage, it's recommended to limit the input voltage to 5V to prevent damage to the internal ESD protection diodes.
  • Yes, the 1SS387, H3F is suitable for high-frequency switching applications up to 100 kHz, but be aware of the increased power losses and consider using a heat sink or thermal management strategy.
  • To prevent latch-up or damage, ensure that the input voltage (VIN) is applied before the enable signal (EN), and that the output voltage (VOUT) is not pre-biased before the device is enabled.

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