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2N2222A - onsemi

Description: Trans GP BJT NPN 30V 800mA 3-Pin TO-18 Box - Bulk

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2N2222A - onsemi PCB footprint - Other - Other - CASE 022–03 (TO–206AA) ISSUE N
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2N2222A Details

  • Manufacturer Part Number:

    2N2222A

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    22-03, TO-18, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.8 A

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    40

  • JEDEC-95 Code:

    TO-206AA

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    300 MHz

  • Turn-off Time-Max (toff):

    285 ns

  • Turn-on Time-Max (ton):

    35 ns

2N2222A Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N2222A is -55°C to 150°C.
  • While the 2N2222A can be used as a switch, it's not ideal for high-frequency applications due to its relatively low transition frequency (ft) of 300 MHz. For high-frequency applications, consider using a transistor with a higher ft.
  • To ensure proper biasing for linear amplifier applications, use a voltage divider network to set the base voltage, and ensure the collector-emitter voltage is at least 2-3 times the voltage of the input signal. Additionally, use a current-limiting resistor in the collector circuit to prevent thermal runaway.
  • The maximum collector current rating for the 2N2222A is 500 mA. Exceeding this rating can lead to device failure.
  • Yes, the 2N2222A can be used in a Darlington pair configuration to increase the current gain. However, ensure proper biasing and heat sinking to prevent thermal issues.

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Part Image 2N2222A Solid State Devices Inc (SSDI)

Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-18

Part Image 2N2222A New England Semiconductor

Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-18

Part Image 2N2222APBFREE Central Semiconductor Corp

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-18

Part Image 2N2222A Micro Electronics Corporation

Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN

Part Image 2N2222ASB STMicroelectronics

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-18

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