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2N2905Ae3 - Microsemi Corporation

Description: Bipolar Transistors - BJT BJTs

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2N2905Ae3 - Microsemi Corporation PCB footprint - Other - Other - 2N2905Ae3-5
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2N2905Ae3 Details

  • Manufacturer Part Number:

    2N2905AE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    BCY

  • Package Description:

    TO-39, 3 PIN

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    HIGH RELIABILITY

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    50

  • JEDEC-95 Code:

    TO-205AD

  • JESD-30 Code:

    O-MBCY-W3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    3 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

  • Turn-off Time-Max (toff):

    300 ns

  • Turn-on Time-Max (ton):

    45 ns

2N2905Ae3 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N2905AE3 is -55°C to 150°C, although the datasheet only specifies the electrical characteristics up to 125°C.
  • Yes, the 2N2905AE3 is suitable for switching applications due to its high switching speed and low saturation voltage. However, ensure that the device is properly biased and the switching frequency is within the recommended range to avoid overheating.
  • To prevent electrostatic discharge (ESD) damage, handle the 2N2905AE3 with ESD-protected equipment, wear an ESD strap, and ensure that the device is stored in an ESD-protected package. The 2N2905AE3 has a human body model (HBM) ESD rating of 2 kV.
  • The recommended storage temperature range for the 2N2905AE3 is -55°C to 150°C, and the recommended storage humidity range is 40% to 60% relative humidity. Avoid storing the device in environments with high humidity or extreme temperatures.
  • The 2N2905AE3 is not specifically designed or tested for radiation hardness. If you need a radiation-hardened transistor, consider using a different device that is specifically designed and qualified for radiation-hardened applications.

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2N2905Ae3 Overview

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Part Image JAN2N2905A Silicon Transistor Corporation

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Part Image 2N2905A Silicon Transistor Corporation

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Part Image 2N2905A Raytheon Semiconductor

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Part Image 2N2905A-BP Micro Commercial Components

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For a full list of alternate parts for 2N2905Ae3, check out Findchips.com