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2N2907 - CDIL

Description: PNP SILICON PLANAR SWITCHING TRANSISTORS , TO-18 Metal Can Package, 40V, 600mA , 400mW , - 65ºC to +200ºC

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2N2907 - CDIL PCB footprint - Other - Other - TO-18
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2N2907 Details

  • Manufacturer Part Number:

    2N2907

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Continental Device India Ltd

  • YTEOL:

    6.5

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Base Capacitance-Max:

    8 pF

  • Collector-Emitter Voltage-Max:

    40 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-18

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    200 MHz

  • Turn-off Time-Max (toff):

    100 ns

  • VCEsat-Max:

    1.6 V

2N2907 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N2907 is -55°C to 150°C, although the datasheet may not explicitly state this.
  • While the 2N2907 can be used as a switch, its transition frequency (fT) is around 300 MHz, which may not be suitable for very high-frequency applications. It's recommended to check the specific frequency requirements of your application before selecting this transistor.
  • To ensure proper biasing for linear amplifier applications, you should follow the recommended biasing circuits and voltage ranges provided in the datasheet or application notes. Additionally, you may need to consider the transistor's Early voltage (VA) and output impedance (Zo) to achieve optimal performance.
  • The maximum power dissipation of the 2N2907 is typically around 625 mW, but this can vary depending on the specific package and operating conditions. Be sure to check the datasheet and thermal management considerations to ensure safe operation.
  • The 2N2907 has a maximum collector-emitter voltage (Vce) rating of 60V, so it's not suitable for very high-voltage applications. If you need to handle higher voltages, consider using a different transistor or adding voltage-regulation circuitry.

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2N2907 Overview

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Part Image 2N2907 Micro Electronics Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-18, TO-18, 3 PIN

Part Image JANS2N2907L Microsemi Corporation (now Microchip)

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA

Part Image JAN2N2907 National Semiconductor Corporation

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Part Image 2N2907 Semitronics Corp

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Part Image 2N2907 Motorola Semiconductor Products

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA

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