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2N3055A - onsemi

Description: Bipolar Transistors - BJT 15A 60V 115W NPN

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2N3055A - onsemi PCB footprint - Other - Other - TO−204 (TO−3) CASE 1−07 STYLE 1
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2N3055A - onsemi  - 3D model - Other - TO−204 (TO−3) CASE 1−07 STYLE 1
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2N3055A Details

  • Manufacturer Part Number:

    2N3055A

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-3

  • Package Description:

    CASE 1-07, TO-3, 2 PIN

  • Pin Count:

    2

  • Manufacturer Package Code:

    CASE 1-07

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    5

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    115 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn80Pb20)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    0.8 MHz

2N3055A Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N3055A is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device to a maximum power dissipation of 115W at a case temperature of 25°C, and to ensure that the collector-emitter voltage and collector current do not exceed their respective maximum ratings.
  • To ensure reliable operation of the 2N3055A in high-temperature environments, it is essential to provide adequate heat sinking and to derate the device's power dissipation accordingly. The device's thermal resistance (RθJA) should be minimized by using a suitable heat sink, and the case temperature should be monitored to prevent overheating. Additionally, the device's electrical characteristics should be derated based on the operating temperature, as specified in the datasheet.
  • The recommended mounting technique for the 2N3055A is to use a suitable heat sink with a thermal interface material (TIM) to ensure good thermal contact. The device should be mounted using a screw or clip to secure it to the heat sink, and the leads should be bent to minimize stress on the device. It is also recommended to use a silicone-based adhesive to attach the heat sink to the PCB or chassis.
  • To protect the 2N3055A from electrical overstress, it is essential to ensure that the device is operated within its recommended electrical characteristics. This includes limiting the collector-emitter voltage and collector current to their respective maximum ratings, and providing adequate protection against voltage spikes and surges. Additionally, the device should be protected against electrostatic discharge (ESD) by using suitable handling and storage procedures.
  • The recommended storage and handling procedure for the 2N3055A is to store the devices in their original packaging or in a dry, cool place, away from direct sunlight and moisture. The devices should be handled using anti-static wrist straps or mats to prevent electrostatic discharge (ESD), and should not be touched or handled by bare hands. Additionally, the devices should be inspected for damage or contamination before use.

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2N3055A Overview

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For a full list of alternate parts for 2N3055A, check out Findchips.com