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2N3585 - Microsemi Corporation

Description: Trans GP BJT NPN 300V 2A 2500mW 3-Pin(2+Tab) TO-66 Tray

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2N3585 - Microsemi Corporation PCB footprint - Other - Other - 2N3585-5
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2N3585 Details

  • Manufacturer Part Number:

    2N3585

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-66

  • Package Description:

    TO-66, 2 PIN

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    HIGH RELIABILITY

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    2 A

  • Collector-Emitter Voltage-Max:

    300 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    25

  • JEDEC-95 Code:

    TO-66

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    10 MHz

2N3585 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N3585 is -55°C to 150°C, although it can withstand storage temperatures from -65°C to 200°C.
  • The 2N3585 is a radiation-hardened device by design, but to ensure its radiation hardness, it's essential to follow proper handling, storage, and assembly procedures to prevent damage from radiation exposure.
  • The maximum power dissipation for the 2N3585 is 1.5 watts, and it's essential to ensure the device is properly heat-sinked to prevent overheating.
  • Yes, the 2N3585 is designed for high-reliability applications, such as aerospace, defense, and industrial control systems, due to its radiation hardness, high temperature range, and low noise characteristics.
  • To troubleshoot issues with the 2N3585, start by checking the device's operating conditions, such as voltage, current, and temperature, and ensure it's properly connected and configured. If issues persist, consult the datasheet and application notes or contact Microsemi Corporation's technical support.

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2N3585 Overview

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2N3585 Alternates

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Image Part Number Model
Part Image JAN2N3585 Microchip Technology Inc

Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin

Part Image BUX67C TT Electronics Power and Hybrid / Semelab Limited

2A, 350V, NPN, Si, POWER TRANSISTOR, TO-213AA, HERMETIC SEALED, METAL, TO-66, 2 PIN

Part Image BUX67B TT Electronics Resistors

Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin

Part Image JAN2N3585 Microsemi Corporation (now Microchip)

Power Bipolar Transistor, 2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin

Part Image JANTXV2N3585 Silicon Transistor Corporation

Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-213, Metal, 2 Pin

For a full list of alternate parts for 2N3585, check out Findchips.com