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2N4123 - Central Semiconductor

Description: Bipolar Transistors - BJT NPN, TO-92, 40v, 30v, 5.0v

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2N4123 - Central Semiconductor PCB footprint - Other - Other - TO-92_3
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2N4123 - Central Semiconductor  - 3D model - Other - TO-92_3
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2N4123 Details

  • Manufacturer Part Number:

    2N4123

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-92

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Central Semiconductor Corp

  • YTEOL:

    6.5

  • Collector Current-Max (IC):

    0.2 A

  • Collector-Emitter Voltage-Max:

    30 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    50

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    250 MHz

2N4123 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N4123 is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate the transistor within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels specified in the datasheet. Additionally, consider the load impedance, input signal amplitude, and output current requirements to determine the optimal bias point. You may also need to consider thermal management and heat sinking to prevent overheating.
  • The maximum power dissipation for the 2N4123 is 625 mW, as specified in the datasheet. However, this value can vary depending on the operating conditions, such as temperature, voltage, and current. It's essential to ensure the transistor is operated within the recommended power dissipation limits to prevent overheating and damage.
  • Yes, the 2N4123 can be used as a switch, but it's essential to consider the transistor's switching characteristics, such as the turn-on and turn-off times, and the maximum switching frequency. The 2N4123 has a relatively slow switching speed compared to modern switching transistors, so it may not be suitable for high-frequency switching applications.
  • To protect the 2N4123 from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, consider adding ESD protection circuits, such as diodes or resistors, to the transistor's input and output pins to prevent damage from static electricity.

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2N4123 Overview

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Part Image 2N4123BU Rochester Electronics LLC

Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N4123J05Z Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

Part Image 2N4123TA Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N4123-T/R NXP Semiconductors

Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N4123TRELEADFREE Central Semiconductor Corp

Small Signal Bipolar Transistor, 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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