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2N4222 - InterFET

Description: JFET N-Channel -30V Low Ciss

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Symbol
2N4222 - InterFET - PCB symbol
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PCB Footprints
2N4222 - InterFET PCB footprint - Other - Other - TO-72_2022-9
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3D Models
2N4222 - InterFET - 3D model - Other - TO-72_2022-9
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2N4222 Details

  • Manufacturer Part Number:

    2N4222

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    2 pF

  • Highest Frequency Band:

    VERY HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-72

  • JESD-30 Code:

    O-MBCY-W4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N4222 Frequently Asked Questions (FAQs)

  • The maximum safe operating temperature for the 2N4222 is 150°C, but it's recommended to operate it at a maximum of 125°C for reliable performance.
  • While the 2N4222 can be used as a switch, it's not ideal for high-frequency signals due to its relatively high capacitance and inductance. It's better suited for low-frequency switching applications.
  • To ensure the 2N4222 is fully turned off, make sure to apply a voltage of at least -5V to the base with respect to the emitter, and keep the base current below 1mA.
  • The recommended storage temperature for the 2N4222 is -40°C to 125°C, with a relative humidity of 60% or less.
  • While the 2N4222 can be used in a linear amplifier circuit, it's not the best choice due to its relatively low current gain (hFE) and high collector-emitter saturation voltage (Vce(sat)). A transistor with a higher hFE and lower Vce(sat) would be a better option.

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