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2N4858 - InterFET

Description: JFET N-Channel -40V Low Noise, TO-18

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PCB Footprints
2N4858 - InterFET PCB footprint - Other - Other - TO-18
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2N4858 - InterFET  - 3D model - Other - TO-18
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2N4858 Details

  • Manufacturer Part Number:

    2N4858

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Contact Manufacturer

  • Package Description:

    TO-18, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    InterFET Corporation

  • Case Connection:

    GATE

  • Configuration:

    SINGLE

  • Drain-source On Resistance-Max:

    60 Ω

  • FET Technology:

    JUNCTION

  • JEDEC-95 Code:

    TO-18

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1.8 W

  • Power Dissipation-Max (Abs):

    0.36 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N4858 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N4858 is -55°C to 150°C, although it can withstand storage temperatures up to 200°C.
  • To ensure proper biasing, the 2N4858 requires a Vgs of 0V to -5V, and a Vds of 10V to 30V. Additionally, the gate-source voltage should be limited to -5V to prevent damage.
  • The maximum allowable power dissipation for the 2N4858 is 1.5W, and it's essential to ensure the device is properly heat-sinked to prevent overheating.
  • Yes, the 2N4858 can be used in switching applications due to its fast switching times (tr and tf) of 10ns and 20ns, respectively. However, it's essential to ensure the device is properly driven and biased to prevent overheating and reduce electromagnetic interference (EMI).
  • The 2N4858 has a relatively high cutoff frequency (fT) of 1.5GHz, making it suitable for high-frequency applications up to several hundred MHz. However, it's essential to consider the device's parasitic capacitances and inductances when designing high-frequency circuits.

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